GSM3909VP Datasheet | Globaltech

30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -30V, -5.1A, RDS(ON)=32mΩ@VGS=-10V - Improved dv/dt capability - Fast switching - Suit for -4.5V Gate Drive Applications - Green Device Available - SOT-23-6L package design Applications - Notebook - Load Switch - Battery Protection - Hand-Held Instruments Packages & Pin Assignments GSM3909VPRF (SOT-23-6L) Top Views Pin Description 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain .gs-power. 1 Ordering Information GS P/N GSM3909VP R F Package Code Pb Free Code Marking Information Part Number GSM3909VPRF Package SOT-23-6...