DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-30V, -5.1A, RDS(ON)=32mΩ@VGS=-10V Improved dv/dt capability Fast switching Suit for -4.5V Gate Drive APPLICATIONS
Green Device Available SOT-23-6L package design APPLICATIONS
Notebook Load Switch Battery Protection Hand-Held Instruments Packages & Pin Assignments GSM3909VPRF (SOT-23-6L) Top Views Pin DESCRIPTION
1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain GSM3909VP 1 Ordering Information GS P/N GSM3909VP R F Package Code Pb Free Code Marking Information Part Number GSM3909VPRF Package SOT-23-6
Globaltech
