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GSM4599C - MOSFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low RDS(ON) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • N-Channel.
  • 60V, 4.5A, RDS(ON)=58mΩ@VGS=10V.
  • 60V, 4.0A, RDS(ON)=85mΩ@VGS=4.5V P-Channel.
  • -60V, -3.5A, RDS(ON)=90mΩ@VGS=-10V.
  • -60V, -3.0A, RDS(ON)=135mΩ@VGS=-4.5V.
  • Fast switching speed.
  • SOP-8 package design.

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Datasheet Details

Part number GSM4599C
Manufacturer Globaltech
File Size 664.62 KB
Description MOSFET
Datasheet download datasheet GSM4599C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM4599C 60V N & P Pair Enhancement Mode MOSFET Product Description These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(ON) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Packages & Pin Assignments GSM4599CSF (SOP-8) Features N-Channel „ 60V, 4.5A, RDS(ON)=58mΩ@VGS=10V „ 60V, 4.0A, RDS(ON)=85mΩ@VGS=4.5V P-Channel „ -60V, -3.5A, RDS(ON)=90mΩ@VGS=-10V „ -60V, -3.0A, RDS(ON)=135mΩ@VGS=-4.