Globaltech GSMDC0956Z
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSMDC0956Z |
|---|---|
| Datasheet | GSMDC0956Z Download |
| Manufacturer |  Globaltech |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● 100V, 10A, RDS(ON)=115mΩ@VGS=10V● Improved dv/dt capability
● Fast switching
● 100% EAS guaranteed
● Green Device Available
● DFN3X3-8L package design
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting Packages & Pin Assignments GSMDC0956ZFF (DFN3X3-8L) GSMDC0956Z Top View Pin
DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information Part Number GSMDC0956ZFF Marking Information Package DFN3X3-8L Quantity 5000 PCS GSMDC0956ZABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter Typical VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Continuous Drain Current TC=25℃ 10 TC=100℃ 6.3 IDM Pulsed Drain Current (Note 1) 40 EAS Single Pulse Avalanche Energy (Note 2) 6 IAS Single Pulse Avalanche Current (Note 2) 11 Power Dissipation (TC=25℃) 29.8 PD Power Dissipation (Derate above 25℃) 0.24 TJ Opera...
