GSMDC2305Z Datasheet | Globaltech

20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -20V, -26A, RDS(ON)=15mΩ@VGS=-4.5V - Improved dv/dt capability - Fast switching - Suit for -1.8V Gate Drive Applications - Green Device Available - DFN3X3-8L package design Applications - Notebook - Load Switch - Networking - Hand-Held Instruments Packages & Pin Assignments GSMDC2305ZFF (DFN3X3-8L) Top View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain .gs-power. 1 Ordering Information GS P/N GSMDC2305Z F F Package Code Pb Free Code Part Number GSMDC2305ZFF Package DFN3X3-8L Mark...