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GSMDC2305Z - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V, -26A, RDS(ON)=15mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number GSMDC2305Z
Manufacturer Globaltech
File Size 543.33 KB
Description P-Channel MOSFET
Datasheet download datasheet GSMDC2305Z Datasheet

Full PDF Text Transcription for GSMDC2305Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMDC2305Z. For precise diagrams, and layout, please refer to the original PDF.

GSMDC2305Z 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techn...

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fect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -20V, -26A, RDS(ON)=15mΩ@VGS=-4.5V „ Improved dv/dt capability „ Fast switching „ Suit for -1.

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