DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-20V, -26A, RDS(ON)=15mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Suit for -1.8V Gate Drive APPLICATIONS
Green Device Available DFN3X3-8L package design APPLICATIONS
Notebook Load Switch Networking Hand-Held Instruments Packages & Pin Assignments GSMDC2305ZFF (DFN3X3-8L) GSMDC2305Z Top View Pin DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC2305Z F F Package Code Pb Free Code Part Number GSMDC2305ZFF Package DFN3X3-8L Mark