DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
30V, 25A, RDS(ON)=18mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available DFN3X3-8L package design APPLICATIONS
MB / VGA / Vcore Load Switch Hand-Held Instrument Packages & Pin Assignments GSMDC3912ZFF (DFN3X3-8L) GSMDC3912Z Top View Pin DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC3912Z F F Package Code Pb Free Code Part Number GSMDC3912ZFF Package DFN3X3-8L Marking Information Absolute Maximu