Datasheet Summary
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
- 30V, 25A, RDS(ON)=18mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available
- DFN3X3-8L package design
Applications
- MB / VGA / Vcore
- Load Switch
- Hand-Held Instrument
Packages & Pin Assignments
GSMDC3912ZFF...