Datasheet4U Logo Datasheet4U.com

GSMDS0966 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V, 10A, RDS(ON)=18mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • SOP-8 package design.

📥 Download Datasheet

Datasheet Details

Part number GSMDS0966
Manufacturer Globaltech
File Size 499.03 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDS0966 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GSM4 Stepper Motor Drive GerrnWich
GSM5 Stepper Motor Drive GerrnWich
GSM793E 80CH Segment Driver Syntec Semiconductor
GSM7980 Dot Matrix LCD Controller/Driver Syntec Semiconductor
GSM850 (GSM850 / GSM900) Antenna Switch Module Hitachi

Other Datasheets by Globaltech

Part Number Description
GSMDS0956 N-Channel MOSFET
GSMDS04N15 N-Channel MOSFET
GSMDS2305 P-Channel MOSFET
GSMDS2603 P-Channel MOSFET
GSMDS3710 N+P Dual-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
GSMDS0966 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Published: |