Globaltech GSMDS2603
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSMDS2603 |
|---|---|
| Datasheet | GSMDS2603 Download |
| Manufacturer |  Globaltech |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● -20V, -14A, RDS(ON)=8.5mΩ@VGS=-4.5V● Improved dv/dt capability
● Fast switching
● Suit for -1.8V Gate Drive
APPLICATIONS
● Green Device Available● SOP-8 package design
APPLICATIONS
● Notebook● Load Switch
● Networking
● Hand-Held Instruments Packages & Pin Assignments GSMDS2603SF (SOP-8) GSMDS2603 Pin
DESCRIPTION
Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8DESCRIPTION
Drain Drain Drain Drain 1 Ordering Information Part Number GSMDS2603SF Package SOP-8 Quantity Reel 4000 PCS Marking Information DS2603
