GSMS05N15 Datasheet | Globaltech

150V N-Channel Enhancement Mode MOSFET Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 150V, 5A, RDS(ON)=65mΩ@VGS=10V - VGS Guarantee ±25V - Improved dv/dt capability - Fast switching - Green Device Available - SOP-8 package design Applications - Notebook - Load Switch - LED applications - Li battery pack application Packages & Pin Assignments GSMS05N15SF (SOP-8) Pin Description Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8 Description Drain Drain Drain Drain .gs-power. 1 Ordering Information GS P/N GSMS05N15 S F Package Code Pb Free Code Part Number GSMS05N15SF Package SOP-8...