Datasheet Summary
100V N-Channel MOSFET
Features
- Advanced trench process technology
- Ideal for convertors and power controls
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Avalanche Energy 100% tested
ID =15A BV=100V Rdson=0.06Ω (Typ.)
Description
The SSF1090 utilizes the latest processing techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These Features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications.
Application n Power switching application
TO-220...
