SSFP8N25 Datasheet | Good-Ark Semiconductor

Description Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application - Switching application VDSS = 250V ID25 = 8.1A RDS(ON) = 0.45Ω Pin1- Gate Pin2- Drain Pin1- Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 8.1 5.1 32 74 0.59 ±30 205 8.1 7.4 4.8 - 55 to +150 300(1.6mm from case) 10 Ibf- in(1.1N- m) Units W W/ْ C V m J A m J V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case - - 1.69 RθCS Case-to-Sink,Flat,Greased Surface - 0.50 - RθJA Junction-to-Ambient - -...