Good-Ark Semiconductor 2N7002KG8
N-Channel MOSFET
FEATURES AND BENEFITS
● Advanced trench MOSFET process technology● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 150℃ operating temperature
● Lead free product SOT-363 2N7002KG8 60V MOSFET Schematic Diagram
DESCRIPTION
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Drain-Source Voltage Gate-Source Voltage Parameter Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 60 ±20 0.115 0.8 0.38 -55 To 150 Unit V V A A W ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambi...