Good-Ark Semiconductor 2SC3097
TRANSISTOR
FEATURES
Power amplifier applicationsMAXIMUM RATINGS
* TA=25℃ unless otherw ise noted Symbol VCBO VCEO VEBO IC Icp PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Current –Pulse Collector Dissipation Junction Temperature Storage Temperature Value 1350 800 9 1.5 3 Units V V V A A W ℃ ℃ 3.EMITTER 1.BASE 2.COLLECTOR 123 Marking: NZP 2SC3097 **** 1 150 -55-150 ELECTRICAL Parameter CHARACTERISTICS(Tamb=25℃ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE hFE unless otherw ise specified) conditions MIN 1350 800 9 100 10 24 5 0.8 35 25 1.5 1 3 30 4 V V MHz pF μS μS μS TYP M AX UNIT V V V μA μA Test Collector-base breakdow n voltage Collector-emitter breakdow n voltage Emitter-base breakdow n voltage Collector cut-off current Emitter cut-off current DC current gain IC=0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,IC=0 VCB=1300V,IE=0 VEB=9V,IC=0 VCE=5V,IC=100mA VCE=5V,IC=1.5A IC=0.5A,IB=0.2A IC=1A,IB=0.2A VCE=10V,IC=100mA VCB=1...