Good-Ark Semiconductor BAV300
Switching Diode
FEATURES
Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100...BAV103 / BAV200...BAV203APPLICATIONS
General purposesMECHANICAL DATA
Case: MicroMELF Glass Case Weight: approx. 12 mg Cathode Band Color: BlackABSOLUTE MAXIMUM RATINGS
Parameter Peak reverse voltage Test Condition Reverse voltage Forward current Peak forward surge current Forward peak current tp= 1 s, Tj=25oC f=50Hz Thermal Characteristics Parameter Junction ambient Junction temperature Stroage temperature range Test Condition mounted on epoxy-glass hard tissue, Fig 4. 35 um copper clad, 0.9m2 copper area per electrodeELECTRICAL CHARACTERISTICS
Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Differential forward resistance Reverse recovery time Test Condition IF=100mA VR=50V VR=100V VR=150V VR=200V Tj=100oC, VR=50V Tj=100oC, VR=100V Tj=100oC, VR=150V Tj=100oC, VR=200V IR=100uA, tp/T=0.01,...