Good-Ark Semiconductor BAV70
Dual Switching Diode
FEATURES
● High switching speed: trr ≤ 6 ns● Low leakage current
● Small SMD plastic packages
● High stability and high reliability
APPLICATIONS
● High-speed switching● General-purpose switching BAV70 Dual Switching Diode 3 Schematic Diagram 2 1 SOT-23
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Symbol Max. Reverse Voltage VR 70 Power Dissipation PD 225 Average Rectified Current IO 200 Non-repetitive Peak Forward Current IFM 400 Peak Forward Surge Current @tp=1us; TA=25°C IFSM 2.0 Thermal Resistance, Junction-to-Ambient RθJA 500 Operating Junction Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -65 to +150 Unit V mW mA mA A °C/W °C °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Max. Unit Reverse Voltage VRB IB=100μA 70 - V Reverse Leakage Current IR VR=70V - 2.5 μA IF=1mA - 0.715 Forward Voltage IF=10mA VF IF=50mA - 0.855 V - 1.00 IF=150mA - 1.25 Reverse Recovery Time TRR IF= IR=10mA, RL=100Ω, IR...