Good-Ark Semiconductor BC848BW
NPN Transistor
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Test conditions Collector-base Breakdown Voltage BC846xW BC847xW VCBO IC= 10µA, IE=0 BC848xW Collector-Emitter Breakdown Voltage BC846xW BC847xW VCEO IC= 10mA, IB=0 Emitter-Base