Good-Ark Semiconductor GDSSF2301B
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.| Part No. | GDSSF2301B |
|---|---|
| Datasheet | GDSSF2301B Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
D GGENERAL FEATURES
● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●PWM applications
●Load switch
●Power management S Schematic diagram Marking and pin Assignment SOT23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2301B SSF2301B SOT23 Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±8 -2.8 -10 1.25 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2301BELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwis...
