Good-Ark Semiconductor GDSSF2316E
MOSFET
| Part No. | GDSSF2316E |
|---|---|
| Datasheet | GDSSF2316E Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V ESD Rating：2000V HBM● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Schematic diagram Application
●Battery protection
●Load switch
●Power management Pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2316E SSF2316E DFN3×3-8L - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Drain Current-Continuous@ Current-Pulsed (Note 1) ID 7 IDM 40 Maximum Power Dissipation PD 1.4 Operating Junction and Storage Temperature Range TJ,TSTDGFN3×3-8L B-O5T5TTOoM15V0IEW Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W Suzhou Goodark Electronics Co., Ltd Version 1.0ELECTRICAL CHARACTERISTICS
(TA=25℃unless o...
