Good-Ark Semiconductor GDSSF2318E
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.| Part No. | GDSSF2318E |
|---|---|
| Datasheet | GDSSF2318E Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package GDSSF2318E Schematic diagram Marking and pin Assignment Application
●Battery protection
●Load switch
●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2318E SSF2318E SOT-23 Ø330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±8 6.5 30 1.4 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2318E ELECT...
