Good-Ark Semiconductor GDSSF2816EB
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.| Part No. | GDSSF2816EB |
|---|---|
| Datasheet | GDSSF2816EB Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GDSSF2816EBGENERAL FEATURES
● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package Schematic diagram Marking and pin Assignment Application
●Battery protection
●Load switch
●Power management TSSOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF2816EB SSF2816EB TSSOP-8 Ø330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 7 25 1.5 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W Suzhou Goodark Electronics Co., L...
