Good-Ark Semiconductor GDSSF3611E
The maximum current rating is limited by bond-wires.| Part No. | GDSSF3611E |
|---|---|
| Datasheet | GDSSF3611E Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
:● Advanced trench MOSFET process technology
● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 150℃ operating temperature GDSSF3611E Marking and pin Assignment Schematic diagram
DESCRIPTION
: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -12 -7.4 -48 2 -30 ± 20 -55 to +150 Units A W V V °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Typ. — Max.
