Good-Ark Semiconductor GS8550M
PNP Transistor
FEATURES
● High collector current● General purpose amplifier and switch
● Complementary pair with GS8050M
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range E B C SOT-23 GS 550M PNP Schematic Diagram Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -40 -25 -6.0 -1.5 -0.5 625 150 -55~150 Unit V V V A A mW °C °C hFE Classifications and Marking hFE Classifications Symbol hFE Range Marking B 85-160 HY2B C 120-200 HY2C D 160-300 HY2D 1/4 GS 550M PNPELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Forward Current Transfer Ratio(1) Forward Cu