Good-Ark Semiconductor GSBAT46W
Schottky Diode
FEATURES
z High breakdown voltage z Low turn-on voltage z Guard ring construction for transient protection GSBAT46W Schottky Diode SOD-123ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage Forward Continuous Current Symbol VRRM VRWM IF Repetitive Peak Forward Current (Note 1) @ tp < 1.0s, Duty Cycle < 50% IFRM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature IFSM PD RθJA Tj TSTG Value 100 150 350 750 500 200 125 -55 to +150 Unit V mA mA mA mW °C/W °C °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Test Conditions Min Reverse Breakdown Voltage(Note 2) Reverse Voltage Leakage Current Forward Voltage(Note 2) VR IR= 100µA VR1=1.5V IR VR2=10V VR3=50V VR4=75V IF1=0.1mA VF IF2=10mA IF3=250mA Diode Capacitance CT VR=0, f=1MHz VR=1V, f=1MHz Notes: 1. Part mounted on FR-4 board with recommended pad layout.