Good-Ark Semiconductor GSBAT54M
Schottky Barrier Diode
| Part No. | GSBAT54M |
|---|---|
| Datasheet | GSBAT54M Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
z Extremely Fast Switching Speed z Low Forward VoltageABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Forward Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR(RMS) IO PD RθJA Tj Tstg GSBAT54M Schottky Barrier Diode SOT-723 1 3 2 Value 30 21 200 150 667 125 -55~+150 Unit V V mA mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Test conditions Reverse Voltage V(BR) IR=100μA Reverse Current =IR VR 25V =IF 0.1mA =IF 1mA Forward Voltage =VF IF 10mA =IF 30mA =IF 100mA Total Capacitance ==Ctot VR 1V,f 1MHz Reverse Recovery Time trr IF= IR=10mA, IR(REC)=1mA Min Typ Max 30 2 0.24 0.32 0.4 0.5 1 10 5 Unit V μA V pF ns 1/2 Package Outline Dimensions GSBAT54M Schottky Barrier Diode 2/2 Doc.USGSBAT54MxUK3.0