Good-Ark Semiconductor GSBAT54X
Schottky Diode
| Part No. | GSBAT54X |
|---|---|
| Datasheet | GSBAT54X Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | Schottky Diode |
| Buy | Stock & Price |
FEATURES
● Low forward voltage drop● Fast switching
● PN junction guard ring for transient and ESD protection GSBAT54X Schottky Diode SOD-523
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted） Parameter DC Reverse Voltage Continuous Forward Current Peak Forward Surge Current Total Power Dissipation Total Resistance Junction to Ambient Junction Temperature Storage Temperature Symbol VR IF IFSM Ptot RθJA TJ TSTG Limits 30 200 600 200 635 150 -55 to +150 Schematic Diagram Unit V mA mA mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted） Parameter Reverse Breakdown Voltage Symbol Min. V(BR)R 30 Forward Voltage VF Reverse Current Diode Capacitance Reverse Recovery Time IR Cd trr Typ. Max. Unit V 0.22 0.24 0.41 0.5 0.52 0.8 0.29 0.32 0.35 0.40 0.5 2.0 V μA 7.6 10 pF 5 ns Conditions IR=100μA IF=0.1mA IF=30mA IF=100mA IF=1.0mA IF=10mA VR=25V VR=1V,f=1MHz IF=IR=10mA 1/3 Typical Electrical Characteristic Curves GSBAT54X Schottky Diode Figure 1. Forward Voltage Figure 2. Leakage Current Figure 3.
