Good-Ark Semiconductor GSBAV99T
Switching Diode
| Part No. | GSBAV99T |
|---|---|
| Datasheet | GSBAV99T Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
● For general purpose switching applications● Fast switching speed
● High conductance 3 2 1 SOT-523
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted） Schematic Diagram Parameter Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VR IF IFSM PD RθJA TJ TSTG Value 85 75 2.0 150 833 150 -55 to +150 Unit V mA A mW °C/W °C °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted） Parameter Symbol Test conditions Reverse Breakdown Voltage V(BR) IR= 1μA Reverse Voltage Leakage Current IR1 VR=75V IR2 VR=25V Forward Voltage Diode Capacitance Reverse Recovery Time IF=1mA VF IF=10mA IF=50mA IF=150mA CD VR=0 f=1MHz t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω Min Max 85 - -2 - 0.03 715 - 855 1000 1250 - 1.5 -4 Unit V μA μA mV pF ns 1/3 Typical Electrical Character
