Good-Ark Semiconductor GSBCP68
NPN Transistor
| Part No. | GSBCP68 |
|---|---|
| Datasheet | GSBCP68 Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● For general AF applications● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary type: GSBCP69 (PNP) SOT-223
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted） Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO VCEO VEBO Value 32 20 5 Unit V V V Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature IC PC* TJ TSTG 1 1 94 -65 to +150 A mW ℃ ℃ 1. BASE 2. COLLECTOR 3. EMITTERELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted） Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Emitter Cut-Off Current IEBO DC Current Gain hFE(1) hFE(2) Collector-Emitter Saturation Voltage Base-Emitter Voltage hFE(3) VCE(sat) VBE1 VBE2 Transition Frequency Coll