Good-Ark Semiconductor GSBCX1188
PNP Transistor
FEATURES
● Low VCE(SAT)● Plastic-Encapsulate Transistors 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) SOT-89-3L Parameter Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCBO VCEO VEBO IC Value -40 -32 -5 -2 Unit V V V A Collector Power Dissipation Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range PC RθJA TJ, TSTG 0.5 250 -55 to +150 W °C/W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO IC=-50μA, IE=0 V(BR)CEO=IC= -1mA , IB 0 V(BR)EBO IE=-50μA, IC=0 ICBO =VCB=-20 V , IE 0 IEBO =VEB=-4 V , IC 0 DC Current Gain 1 Collector-Emitter Saturation Voltage 1 Transition Frequency Outpu