Good-Ark Semiconductor GSBF620
NPN Transistor
FEATURES
Low Current (Max. 50mA) High Voltage (Max. 300V) Video Output StagesABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol Value VCBO 300 VCEO VEBO IC 300 5 50 PC 500 TJ -55 to 150 TSTG -55 to 150 Unit V V V mA mW °C °C GSBF620 NPN Transistor SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTERELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Symbol Test Condition V(BR)CBO IC=100μA, IE=0 V(BR)CEO IC=1mA, IB=0 V(BR)EBO IE=100μA, IC=0 ICBO VCB=200V, IE=0 IEBO VEB=5V, IC=0 hFE VCE=20V, IC=25mA VCE(sat) IC=30mA, IB=5mA