FEATURES AND BENEFITS
PPAK 5x6 § Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery GSGP06140 60V N-Channel MOSFET D G S Schematic Diagram DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C) Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM EAS IAS PD RθJA RθJC TJ TSTG Max. 60 ±20 140 88 560 423 92 110 0.89 62 1.12 -50 To +150 -50 To +150 Unit V V A A A mJ A W W/°C °C/W °C/W °C °C 1/5 GSGP06140 60V N-Channel MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwis...
Good-Ark Semiconductor
