FEATURES AND BENEFITS
Advanced MOSFET process technology Ideal for high efficiency switched mode power supplies Low on-resistance with low gate charge Fast switching and reverse body recovery S S S SS S SG G S Schematic Diagram DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Max. Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) 300 ID 192 Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (T C=25°C) Power Dissipation-Derate above 25°C I DM 1200 EAS 3120 I AS 79 480 PD 3.2 Thermal Resistance, Junction-to-Ambient RθJA 62 Thermal Resistance, Junction-to-Case RθJC 0.31 Operating Junction Temperature Range TJ -55 To +175 Storage Temperature Range TSTG -55 To +175 Unit V V A A mJ A W W/°C °C/W °C/W °C °C 1/6 GSGTL1R510 100V N-Channel MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise specified) Parameter On / Off Characteristics Symbol Conditions Min.
Good-Ark Semiconductor
