FEATURES AND BENEFITS
§ Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery TO-252 Schematic Diagram DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise specified) Parameter Symbol Max. Drain-Source Voltage VDS 650 Gate-Source Voltage, AC (f>1 Hz) VGS ±30 Drain Current-Continuous (TC=25°C) 5 ID Drain Current-Continuous (TC=100°C) 3 Drain Current-Pulsed1 IDM Power Dissipation (TC=25°C) PD Power Dissipation-Derate Above25°C 20 46 0.37 Single Pulse Avalanche Energy2 Avalanche Current1 Repetitive Avalanche Energy ，tAR Limited by Tjmax1 Drain Source Voltage Slope, VDS ≤480 V, EAS IAR EAR dv/dt 52 0.9 0.14 50 Reverse Diode dv/dt，VDS ≤480 V, ISD<ID dv/dt 15 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range RθJC RθJA TJ, TSTG 2.72 75 -55 To +150 Unit V V A A A W W/°C mJ A mJ V/nS V/nS °...
Good-Ark Semiconductor
