GSMP0336 Datasheet PDF | Good-Ark Semiconductor

Good-Ark Semiconductor GSMP0336

The GSMP0336 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.

Part No.	GSMP0336
Datasheet	GSMP0336 Download
Manufacturer	Good-Ark Semiconductor
Description	30V 4 IN 1 N-Channel MOSFETs
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FEATURES AND BENEFITS

Advanced MOSFET process technology Ideal for high efficiency switched mode power supplies Low on-resistance with low gate charge Fast switching and reverse body recovery

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TC=25°C unless otherwise specified) Parameter Symbol Max. Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) 35 ID 22 Drain Current-Pulsed1 Single Pulse Avalanche Energy2 IDM 140 EAS 13 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C) Power Dissipation-Derate above 25°C IAS 16 21.5 PD 0.17 Thermal Resistance, Junction-to-Ambient RθJA 62 Thermal Resistance, Junction-to-Case RθJC 5.8 Operating Junction Temperature Range TJ -55 To +150 Storage Temperature Range TSTG -55 To +150 Unit V V A A mJ A W W/°C °C/W °C/W °C °C 1/6 GSMP0336 30V 4 IN 1 N-Channel MOSFETs

ELECTRICAL CHARACTERISTICS

(TJ=25°C unless otherwise specified) Parameter On/Off Characteristics Drain-Source Br...