Good-Ark Semiconductor MMBT3904AT
NPN Transistor
FEATURES
● Complementary to MMBT3906AT● Small Package
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO VCEO VEBO Value 60 40 6 Unit V V V Collector Current - Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature IC PC RθJA TJ TSTG 200 150 833 150 -55 to +150 mA mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Base Input Capacitance Delay Time Rise Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IEBO hFE(1) hFE(2) hFE(3) hFE(4