Good-Ark Semiconductor MMBT3906AT
PNP Transistor
FEATURES
● Epitaxial planar die construction● Complementary NPN type available MMBT3904AT
● Also available in lead free version
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO VCEO VEBO Value -40 -40 -5 Unit V V V Collector Current - Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature IC PC RθJA TJ TSTG -200 150 833 -55 to +150 -55 to +150 mA mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Noise Figure Delay Time Rise Time Stor