Good-Ark Semiconductor MMBT596
NPN Transistor
FEATURES
● High DC Current Gain● Complimentary to MMBT624 MMBT596 NPN Transistor 3 1. BASE 2. EMITTER 3. COLLECTOR 2
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Juction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Rating 30 25 5 700 200 625 -55 to +150 -55 to +150 1 SOT-23 Unit V V V mA mW °C/W °C °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter Voltage Tansition Frequency Collector Output Capacitance Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE(1)* hFE(2)* VCE(sat)* VBE* fT Cob Conditions IR=100µA, IE=0 IC=1mA,