Good-Ark Semiconductor MMDT2907A
Dual PNP Transistor
FEATURES
● Ideal for medium power amplification and switching● Plastic-Encapsulate transistor
● Complementary NPN type available MMDT2222A MMDT2907A Dual PNP Transistor
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Value -60 -60 -5 -600 200 -55 to +150 -55 to +150 Unit V V V mA mW ℃ ℃ SOT-363 Schematic DiagramELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time