Good-Ark Semiconductor PZT2907A
PNP Transistor
FEATURES
● Epitaxial planar die construction● Complementary NPN Type available (PZT2222A)
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO VCEO VEBO Collector Current - Continuous IC Collector Power Dissipation PC Thermal Resistance Junction−to−Ambient 1 RqJA Junction and Storage Temperature TJ,TSTG Note 1: FR−4 with 1 oz and 713 mm2 of copper area. Value -60 -60 -5 -0.6 1 83.3 -55 to +150 Unit V V V A W ℃/W ℃ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted) Parameter Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Capacitance Emitter Capacitance Delay Time Rise Time Storage Time Fall Time Turn-on Time Turn-off Time = V(BR)CBO IC=-1...