Good-Ark Semiconductor SSF6911S
The SSF6911S utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦ 2%.| Part No. | SSF6911S |
|---|---|
| Datasheet | SSF6911S Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | 60V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
Advanced MOSFET process technology Ideal for motor drive, power tools and LED lighting Low on-resistance with low gate charge Fast switching and reverse body recovery SOT-23 SSF6911S 60V P-Channel MOSFET D G S Schematic DiagramDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Power Dissipation (TC=25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID IDM PD PD TSTG TJ Value -60 ±20 -2 -1.25 -8 1.56 0.012 -50 to +150 -50 to +150 Unit V V A A A W W/°C °C °C Thermal Characteristics Parameter Symbol Typ Thermal Resistance Junction to Ambient RθJA --- Max Unit 80 °C/W 1/5 SSF6911S 60V P-Channel MOSFETELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise specified) Parameter Symbol Conditions Off Characteristics Drain-So...
