SSF8970 Datasheet PDF | Good-Ark Semiconductor

Good-Ark Semiconductor SSF8970

The SSF8970 utilizes the latest trench processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in battery protection, power switching and a wide variety of other applications.

Part No.	SSF8970
Datasheet	SSF8970 Download
Manufacturer	Good-Ark Semiconductor
Description	80V N-Channel MOSFET
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DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise specified) Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operating Junction Temperature Range VDS VGS ID IDM EAS IAS PD TSTG TJ 80 ±20 200 126 800 1280 160 208 1.66 -50 to 150 -50 to 150 V V A A A mJ A W W/°C °C °C Thermal Characteristics Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Symbol RθJA RθJC Max. 62 0.6 Unit °C/W °C/W SSF8970 80V N-Channel MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise specified) Off Characteristics Symbol Parameter Conditions Min. BVDSS BVDSS/TJ IDSS IGSS Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current VGS=0V , ID=250uA Reference to 25°C , ID=1mA VDS=80V , VGS=0V , TJ=25°C VDS=64V , VGS=0V , TJ=125°C VGS=±25V , VDS=0V 80 - Typ.