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GPT04N60A - POWER FIELD EFFECT TRANSISTOR

Features

  • This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT04N60A
Manufacturer Greatpower
File Size 402.22 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT04N60A Datasheet

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Full PDF Text Transcription

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GPT04N60A POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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