GPT07N70 Datasheet | Greatpower

DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. - - - - - - Reduced Gate Charge Ultra Low On-Resistance Provides Higher Efficiency Avalanche Energy Specified Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode Diode is Characterized for Use in...