2SD2324 Datasheet | Kexin Semiconductor

Features Low saturation voltage. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacity. Small-sized package facilitating the realization of high-density, small-sized hybrid ICs. Contains a bias resistor between base and emitter. +0.1 1.3-0.1 Contains a diode between colletor and emitter. +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage, With Zener diode (11±3V) Collector-emitter voltage, With Zener diode (11±3V) Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 15 5 0.8 2 200 150 -55 to +150 Unit V V V A A m W Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage V(BR)CEO Diode forward voltage Base-emitter resistance VF RBE Symbol Ic BO h FE f T Cob Testconditons VCB = 15V , IE = 0 VCE = 2V , IC = 0.5A VCE = 2V , IC = 0.5A VCB = 10V , f = 1MHz 70 150 15 0.16 0.85 20 20 15 1.5 1 V kÙ 0.3 1.2 MHz p F V V V V Min Typ Max 1.0 Unit ìA VCE(sat) IC = 500m A , IB = 10m A VBE(sat) IC = 500m A , IB = 10m A V(BR)CBO IC = 10ìA , IE = 0 IC = 10ìA , RBE = IC = 10m A , RBE = IF = 0.5A Marking Marking BN +0.1 0.38-0.1 0-0.1 .kexin..cn...