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2SD965 - Silicon NPN Transistor

Key Features

  • Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 0.75 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Para.

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Datasheet Details

Part number 2SD965
Manufacturer Guangdong Kexin Industrial
File Size 72.72 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD965 Datasheet

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Full PDF Text Transcription (Reference)

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SMD Type Silicon NPN epitaxial planar type 2SD965 Transistors IC www.DataSheet4U.com Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 0.