2SJ325 - MOS Field Effect Power Transistors

Product Overview

Guangdong Kexin Industrial

Part number	2SJ325
Manufacturer	Guangdong Kexin Industrial
File Size	107.26 KB
Description	MOS Field Effect Power Transistors
Datasheet	2SJ325 Datasheet
Additional preview pages of the 2SJ325 datasheet.

Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gate Protection Diode 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Dra.

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Published: Nov 23, 2011 |