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BC808A - PNP Silicon AF Transistors

Key Features

  • +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current Total power dissipation Storage temperature Junction temperature Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Rating -30 -25 -5 -500 -1 -100 310 -65 to +150 150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collect.

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Datasheet Details

Part number BC808A
Manufacturer Guangdong Kexin Industrial
File Size 60.31 KB
Description PNP Silicon AF Transistors
Datasheet download datasheet BC808A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SMD Type PNP Silicon AF Transistors KC808A(BC808A) SOT-23 Transistors Unit: mm For general AF applications. +0.1 2.4-0.1 High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.