KC817 Datasheet | Kexin Semiconductor

Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 50 45 5 800 310 150 -65 to +150 Unit V V V m A m W Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain - Collector saturation voltage - Base emitter on voltage Output Capacitance Transition frequency - Pulsed: PW 350 ìs, duty cycle 2% Symbol VCBO VCEO VEBO ICES IEBO h FE IC = 300 m A, VCE = 1 V VCE(sat) IC = 500 m A, IB = 50 m A VBE(on) VCE=1V,IC=300m A Cob f T VCB=10V,f=1MHz IC = 10 m A, VCE = 5 V, f = 50 MHz 100 60 0.7 1.2 12 V V p F MHz IC = 10 Testconditons A,VBE = 0 Min 50 45 5 100 100 100 630 Typ Max Unit V V V n A n A IC = 10 m A, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, VBE= 0 VEB = 4 V, IC = 0 IC = 100 m A, VCE = 1 V Marking NO. Marking h FE KC817-16 8FA 100 250 KC817-25 8FB 160 400 KC817-40 8FC 250 630 +0.1 0.38-0.1 0-0.1 .kexin..cn...