Click to expand full text
www.DataSheet4U.com
SMD Type
NPN Silicon AF Transistors Array KC846S(BC846S)
Transistors
SOT-363
1.3
+0.1 -0.1
Unit: mm
0.65
0.525
For AF input stage and driver applications High current gain. Low collector-emitter saturation voltage.
0.36
+0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02
0.1max
1 E1 2 B1 3 C2
4 E2 5 B2 6 C1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM PD Tj Tstg Rating 80 65 6 100 200 250 150 -65 to +150 Unit V V V mA mA mW
+0.05 0.95-0.05
+0.1 1.25-0.1
+0.15 2.3-0.15
Features
www.kexin.com.cn
1
www.DataSheet4U.
KC846S Datasheet
