KC846S Datasheet | Kexin Semiconductor

Features .kexin..cn .. SMD Type KC846S(BC846S) Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain - Collector-emitter saturation voltage- Base-emitter saturation voltage- Base-emitter voltage- Collector-base capacitance Emitter-base capacitance Noise figure Transition frequency - Pulse test: t < 300 s; D < 2% Symbol VCBO VCEO VEBO ICBO h FE VCE(sat) VBE(sat) VBE(ON) Ccb Ceb F f T IC = 10 IE = 10 Testconditons A, IE = 0 A, IC = 0 Min 80 65 6 15 5 250 200 290 90 200 700 900 580 660 2 10 ,f = 1 250 10 700 770 450 250 650 Typ Max Diodes Unit V V V n A A IC = 10 m A, IB = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 IC = 10 A, VCE = 5 V IC = 2 m A, VCE = 5 V IC = 10 m A, IB = 0.5 m A IC = 100 m A, IB = 5 m A IC = 10 m A, IB = 0.5 m A IC = 100 m A, IB = 5 m A IC = 2 m A, VCE = 5 V IC = 10 m A, VCE = 5 V VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz IC = 200 A, VCE = 5 V, RS = 2 k k Hz, f = 200 Hz m V m V m V p F p F d B MHz IC = 20 m A, VCE = 5 V, f = 100 MHz Marking Marking...