KC848B Datasheet | Kexin Semiconductor

Features +0.1 2.4-0.1 For Switching and AF Amplifier Applications +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Ideally suited for automatic insertion +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter KC846 Collector-Base Voltage KC847 KC848 KC846 Collector-Emitter Voltage KC847 KC848 Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VEBO IC PC TJ Tstg VCEO VCBO Symbol Rating 80 50 30 65 45 30 6 0.1 200 150 -65 to +150 V A m W V V Unit +0.1 0.38-0.1 0-0.1 .kexin..cn .. SMD Type KC846A,B/KC847A,B,C/KC848A,B,C (BC846A,B/BC847A,B,C/BC848A,B,C) Symbol KC846 Collector-base breakdown voltage KC847 KC848 KC846 Collector-emitter breakdown voltage KC847 KC848 Emitter-base Breakdown voltage KC846 Collector-base cutoff current KC847 KC848 KC846 Collector-emitter cutoff current KC847 KC848 Emitter-base cutoff current KC846A,847A,848A DC current gain KC846B,847B,848B KC847C,848C Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency VCE(sat) IC = 100 m A , IB = 5m A VBE(sat) IC = 100 m A , IB = 5m A Cob f T VCB=10V,f=1MHz h FE VCE = 5 V , IC = 2 m A IEBO ICEO ICBO VEBO IE = 10 ìA , IC = 0 VCB = 70 V , IE = 0 VCB = 50 V , IE = 0 VCB =30 V , IE = 0 VCE = 70V , IB = 0 VCE = 50V , IB = 0 VCE = 30V , IB = 0 VEB = 5 V , IC = 0 VCEO IC = 10m A , IB = 0 VCBO IC = 10 ìA , IE = 0 Testconditons Transistors Diodes Electrical Characteristics Ta = 25 Parameter Min 80 50 30 65 45 30 6 V V V Typ Max Unit 0.1 110 200 420 220 450 800 0.5 1.1 4.5 V V p F MHz VCE = 5 V , IC = 10 m A , f = 100 100 MHz Marking NO. Marking NO. Marking NO. Marking KC846A 1A KC847A 1E KC848A 1J KC846B 1B KC847B 1F KC848B 1K KC847C 1G KC848C 1L .kexin..cn .. SMD Type KC846A,B/KC847A,B,C/KC848A,B,C...