KI6968BEDQ - Dual N-Channel 2.5-V (G-S) MOSFET Common Drain

Features

VDS=20V,rDS(on)=0.022 VDS=20V,rDS(on)=0.030 @VGS=4.5V,ID=6.5A @VGS=2.5V,ID=5.5A Unit: mm N-Channel.
Typical value by design N-Channel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
Pulsed Drain Current Continuous Source Current.
Maximum Power Dissipation TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient.
t 10 sec TJ, Tstg Symbol RthJA RthJF Typ 72 100 55 TA =.

Guangdong Kexin Industrial

Datasheet Details

Part number	KI6968BEDQ
Manufacturer	Guangdong Kexin Industrial
File Size	75.19 KB
Description	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain
Datasheet	KI6968BEDQ Datasheet
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SMD Type Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 MOSFET IC www.DataSheet4U.com Features VDS=20V,rDS(on)=0.022 VDS=20V,rDS(on)=0.030 @VGS=4.5V,ID=6.5A @VGS=2.5V,ID=5.5A Unit: mm N-Channel * Typical value by design N-Channel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* t 10 sec TJ, Tstg Symbol RthJA RthJF Typ 72 100 55 TA = 25 TA = 70 IDM IS PD 1.5 1.5 0.96 -55 to 150 Max 83 120 70 /W Unit Symbol VDS VGS ID 6.5 5.5 30 1.0 1.0 0.64 W 10 secs Steady State 20 12 5.2 3.

Published: Feb 8, 2011 |