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KRLML6402 - P-Channel Enhancement MOSFET

Features

  • s.
  • Ultra low on-resistance.
  • P-Channel MOSFET.
  • SOT-23 Footprint.
  • Low profile(＜1.1mm).
  • Available in tape and reel.
  • Fast switching. +2.4 0.1 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.38 0.1 -0.1 +0.97 0.1 -0.1 +0.11.3 - 0 .1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolraleicntor.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dra.

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Datasheet Details

Part number KRLML6402
Manufacturer Guangdong Kexin Industrial
File Size 1.84 MB
Description P-Channel Enhancement MOSFET
Datasheet download datasheet KRLML6402 Datasheet
Additional preview pages of the KRLML6402 datasheet.

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    Full PDF Text Transcription

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    SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 (KRLML6402) ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. ● Fast switching. +2.4 0.1 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.38 0.1 -0.1 +0.97 0.1 -0.1 +0.11.3 - 0 .1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolraleicntor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current VGS=4.5V@ TA=70℃ Pulsed Drain Current a Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ Single Pulse Avalanche Energy b Thermal Resistance.
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